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Transistor Polarity : NPN
Product Category : Bipolar Transistor - Bipolar Junction Transistor (BJT)
Installation style : Through Hole
Pd-power dissipation : 100 W
Factory packaging quantity : 2000
Package : Cut Tape
Collector continuous current : 10 A
Gain Bandwidth Product fT : 30 MHz
Configuration : Triple
Product Type : BJTs - Bipolar Transistors
Emitter - base voltage VEBO : 5 V
Collector-emitter maximum voltage VCEO : 140 V
DC Collector / Base Gain hfe Min : 55
Manufacturer : Toshiba
Description : Silicon NPN Triple Diffused Type Power Amplifier Applications
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