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FID60-06D

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FID60-06D

Gate-Emitter Leakage Current : 200 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 65 A

Pd - Power Dissipation : 200 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : ISOPLUS i4-PAC-5

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 1.6 V

Manufacturer : IXYS

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The FID60-06D,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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