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Transistor Polarity : NPN
Technology : Si
Product Category : RF Bipolar Transistors
Mounting Style : Through Hole
Transistor Type : Bipolar Power
Collector- Emitter Voltage VCEO Max : 55 V
Maximum Operating Temperature : + 200 C
DC Collector/Base Gain hfe Min : 15
Packaging : Tray
Manufacturer : ASI / Advanced Semiconductor, Inc.
Emitter- Base Voltage VEBO : 4 V
Continuous Collector Current : 10 A
Description : RF Bipolar Transistors RF Transistor
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