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Transistor Polarity : P-Channel
Technology : Si
Id - Continuous Drain Current : - 4.1 A
Mounting Style : SMD/SMT
Minimum Operating Temperature : - 55 C
Package / Case : U-WLB1010-4
Maximum Operating Temperature : + 150 C
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : - 20 V
Packaging : Reel
Vgs th - Gate-Source Threshold Voltage : - 800 mV
Product Category : MOSFET
Rds On - Drain-Source Resistance : 40 mOhms
Vgs - Gate-Source Voltage : - 6 V
Qg - Gate Charge : 2.3 nC
Manufacturer : Diodes Incorporated
Description : MOSFET P-Ch ENH Mode FET -20V -6
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