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IRFB3006GPBF

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RF Front End [27]
Industrial Temperature Sensors [2]
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RF Mixer [9]
RF Receiver [49]
RFID Transponders [1]
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Compass, Magnetic Field (Modules) [5]
Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
NTC Thermistors [40]

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IRFB3006GPBF

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 195A (Tc)

FET Type : N-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 300nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 1000

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : HEXFET®

Input Capacitance (Ciss) (Max) @ Vds : 8970pF @ 50V

Supplier Device Package : TO-220AB

Part Status : Not For New Designs

Packaging : Tube

Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 170A, 10V

Power Dissipation (Max) : 375W (Tc)

Package / Case : TO-220-3

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 250µA

Drain to Source Voltage (Vdss) : 60V

Description : MOSFET N-CH 60V 195A TO220AB

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