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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Operating Temperature : 150°C (TJ)
Package / Case : 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs : 175 nC @ 10 V
Rds On (Max) @ Id, Vgs : 3.1mOhm @ 26A, 10V
FET Type : P-Channel
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 30 V
Vgs (Max) : ±20V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 7850 pF @ 15 V
Mounting Type : Surface Mount
Series : -
Supplier Device Package : 8-HSOP
Mfr : Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C : 26A (Ta), 80A (Tc)
Power Dissipation (Max) : 3W (Ta)
Technology : MOSFET (Metal Oxide)
Base Product Number : RS1E
Description : MOSFET P-CH 30V 26A/80A 8HSOP
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RS1E260ATTB1 Images |