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RS1L120GNTB

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RS1L120GNTB

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.7V @ 200µA

Operating Temperature : 150°C (TJ)

Package / Case : 8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs : 26 nC @ 10 V

Rds On (Max) @ Id, Vgs : 12.7mOhm @ 12A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1330 pF @ 30 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : 8-HSOP

Mfr : Rohm Semiconductor

Current - Continuous Drain (Id) @ 25°C : 12A (Ta), 36A (Tc)

Power Dissipation (Max) : 3W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : RS1L

Description : MOSFET N-CH 60V 12A/36A 8HSOP

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N-Channel 60 V 12A (Ta), 36A (Tc) 3W (Ta) Surface Mount 8-HSOP
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