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IXFH110N10P

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IXFH110N10P

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5V @ 4mA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-247-3

Gate Charge (Qg) (Max) @ Vgs : 110 nC @ 10 V

Rds On (Max) @ Id, Vgs : 15mOhm @ 500mA, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 3550 pF @ 25 V

Mounting Type : Through Hole

Series : HiPerFET™, Polar

Supplier Device Package : TO-247AD (IXFH)

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 110A (Tc)

Power Dissipation (Max) : 480W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXFH110

Description : MOSFET N-CH 100V 110A TO247AD

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N-Channel 100 V 110A (Tc) 480W (Tc) Through Hole TO-247AD (IXFH)

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