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Part Number : SI4909DY-T1-GE3
Manufacturer : Vishay / Siliconix
Description : SI4909DY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Tanssion
Lifecycle : New from this manufacturer
Datasheet : SI4909DY-T1-GE3.pdf
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : SI4909DY-T1-GE3 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $1.05
Remark : Manufacturer: Vishay / Siliconix. Tanssion is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Weight : 506.605978 mg
Packaging : Cut Tape
Rds On Max : 27 mΩ
Case/Package : SOIC
Input Capacitance : 2 nF
Threshold Voltage : -1.2 V
Number of Elements : 2
Turn-Off Delay Time : 50 ns
Max Power Dissipation : 3.2 W
Min Operating Temperature : -55 °C
Gate to Source Voltage (Vgs) : 20 V
Max Junction Temperature (Tj) : 150 °C
Drain to Source Breakdown Voltage : -40 V
Products Category : Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty : 9074 In Stock
Applications : Building automation Motor drives
Height : 1.75 mm
Fall Time : 13 ns
Rise Time : 9 ns
Schedule B : 8541290080
Number of Pins : 8
Power Dissipation : 2 W
Number of Channels : 2
Turn-On Delay Time : 10 ns
Element Configuration : Dual
Max Operating Temperature : 150 °C
Drain to Source Resistance : 21 mΩ
Continuous Drain Current (ID) : -8 A
Drain to Source Voltage (Vdss) : -40 V
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