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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : SMD/SMT
Continuous Collector Current at 25 C : 60 A
Pd - Power Dissipation : 300 W
Collector- Emitter Voltage VCEO Max : 1.2 kV
Package / Case : TO-263-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.96 V
Manufacturer : IXYS
Description : IGBT Transistors GenX3 1200V IGBT
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IXGA30N120B3 Images |
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