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Gate-Emitter Leakage Current : 200 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 80 A
Pd - Power Dissipation : 535 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247
Maximum Operating Temperature : + 175 C
Maximum Gate Emitter Voltage : 30 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2 V
Manufacturer : onsemi
Description : IGBT Transistors 1200V/40A FAST IGBT FSII
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