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Gate-Emitter Leakage Current : +/- 200 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 85 A
Pd - Power Dissipation : 277 W
Collector- Emitter Voltage VCEO Max : 650 V
Package / Case : TO-247-3
Maximum Operating Temperature : + 175 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 30 V
Collector-Emitter Saturation Voltage : 1.6 V
Manufacturer : ROHM Semiconductor
Description : IGBT Transistors 650V 50A IGBT Stop Trench
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RGTH00TS65DGC11 Images |
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