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Gate-Emitter Leakage Current : 500 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 32 A
Pd - Power Dissipation : 250 W
Collector- Emitter Voltage VCEO Max : 2.5 kV
Package / Case : ISOPLUS i4-PAC-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 3.2 V
Manufacturer : IXYS
Description : IGBT Transistors High Voltage IGBT 2500V; 19A
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IXLF19N250A Images |
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