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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 100 A
Pd - Power Dissipation : 333 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247-3
Maximum Operating Temperature : + 175 C
Maximum Gate Emitter Voltage : 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.25 V
Manufacturer : Infineon Technologies
Description : IGBT Transistors HIGH SPEED SWITCHING
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