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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : SMD/SMT
Continuous Collector Current at 25 C : 22 A
Pd - Power Dissipation : 100 W
Collector- Emitter Voltage VCEO Max : 1.2 kV
Package / Case : TO-263AA-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.4 V
Manufacturer : IXYS
Description : IGBT Transistors 1200V, 12A IGBT; G Series
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IXGA12N120A3 Images |
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