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Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 80 A
Pd - Power Dissipation : 79 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-3PF
Maximum Operating Temperature : + 175 C
Packaging : Tube
Maximum Gate Emitter Voltage : 20 V
Collector-Emitter Saturation Voltage : 2.1 V
Manufacturer : Fairchild Semiconductor
Description : IGBT Transistors 600 V 80 A 79 W
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