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Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 120 A
Pd - Power Dissipation : 600 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Manufacturer : Fairchild Semiconductor
Description : IGBT Transistors 600V/60A Field Stop IGBT ver. 2
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